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Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

NANOTECHNOLOGY

LANCASTER, S.; GROISS, H.; ZEDERBAUER, T.; ANDREWS, A.; MACFARLAND, D.; SCHRENK, W.; STRASSER, G.; DETZ, H., 2019: Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy. NANOTECHNOLOGY 30(6), p. 065602-1 - 10, doi: 10.1088/1361-6528/aaf11e; FULL TEXT

Research Groups:

• Epitaxial Materials and Nanostructures

CEITEC authors:

• Dipl.-Ing. Dr.techn. Hermann Detz