Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

PHYSICAL REVIEW B

Klenovsky, P; Brehm, M; Krapek, V; Lausecker, E; Munzar, D; Hackl, F; Steiner, H; Fromherz, T; Bauer, G; Humlicek, J, 2012: Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition. PHYSICAL REVIEW B 86(11), p. ´nestrankovano´ - , doi: 10.1103/PhysRevB.86.115305

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