Low pressure chemical vapor deposition - amorphous Si (growth of oxides / oxinitrides) (LPCVD-polySi)
CONTACT US
Guarantor:
Mgr. Filip Münz, Ph.D.
Instrument status:
Operational, 9.2.2018 16:45
Equipment placement:
CEITEC Nano - C1.34
Výzkumná skupina:
CF: CEITEC Nano
Popis:
This position within the LPCVD system is dedicated to growth of amorphous silicon on Si wafers, using silane (SiH4) as a precursor in LPCVD process.