Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

NEW JOURNAL OF PHYSICS

Ruzicka, J; Caha, O; Holy, V; Steiner, H; Volobuiev, V; Ney, A; Bauer, G; Duchon, T; Veltruska, K; Khalakhan, I; Matolin, V; Schwier, EF; Iwasawa, H; Shimada, K; Springholz, G, 2015: Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. NEW JOURNAL OF PHYSICS 17, doi: 10.1088/1367-2630/17/1/013028

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