We are a research group focused on plasma technologies and surface modification of materials, particularly polymers, nanofibres, and nanostructured surfaces. We work with low temperature, so called cold plasma, which we use for both plasma surface treatment and plasma chemical modification, as well as for thin film deposition. Our research lies at the intersection of plasma physics, surface chemistry, and materials engineering, and builds on the long standing development of plasma technologies in the Czech Republic
Lenka Zajíčková is active within CEITEC and also at the Faculty of Electrical Engineering and Communication, Brno University of Technology, where a new plasma laboratory was recently established, focusing, among other areas, on atmospheric plasma discharges. She intentionally connects these two research infrastructures. CEITEC provides facilities for the study of biointeractions and material characterization, while the Faculty of Electrical Engineering and Communication enables the development of experimental plasma sources that cannot be operated under standard laboratory conditions
Our current research focuses on plasma polymerization and plasma chemical deposition of organic coatings with controlled chemical composition and structure. We study in detail the relationship between plasma process parameters and the resulting properties of bioactive surfaces, particularly their ability to bind proteins and interact appropriately with cells
ROY, R.; GOMEZ, I.; BHATTACHARJEE, S.; MAZUMDER, N.; SAHA, S.; ZAJÍČKOVÁ, L.
doi: 10.1016/j.carbon.2025.120979
OZ, U.; KUCUKTURKMEN, B.; GOMEZ, I.; ELSHERBENY, A.; IPEK TEKNECI, S.; ESIM, O.; GOKSEVER, S.; OZKOSE, U.; GULYUZ, S.; BAZAN-COBELO, C.; YILMAZ, O.; USTUNDAG, A.; MEDALOVA, J.; BOZKIR, A.; ZAJÍČKOVÁ,…
doi: 10.1021/acsomega.5c07253
PRADHAN, A.; MUESER, M.; MILLER, N.; ABDELNABE, J.; AFFERRANTE, L.; ALBERTINI, D.; ALDAVE, D.; ALGIERI, L.; ALI, N.; ALMQVIST, A.; AMANN, T.; ARES, P.; BALZER, B.; BAUGH, L.; BERBERICH, E.; BJORLING,…
doi: 10.1007/s11249-025-02014-y
JANŮŠOVÁ, M.; MATUŠŮ, P.; BARTOŠÍKOVÁ, J.; JANŮ, L.; ŠILLEROVÁ, Z.; NEČAS, D.; RYŠÁNEK, P.; MEDALOVÁ, J.; ZAJÍČKOVÁ, L.
doi: 10.1016/j.apmt.2025.102965
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SiC provides several advantages over silicon in semiconductor applications: 10x higher dielectric breakdown field…
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