• Speaker: Prof. Dafiné Ravelosona
  • Institution: Center for Nanoscience and Nanotechnology (C2N), Université Paris Sud, France
  • Date: 03.04. 2018
  • Place: CEITEC Brno University of Technology


Materials with perpendicular magnetic anisotropy (PMA) are considered as the
most promising candidates for the next generation of ultra-high density
Magnetic Random Access Memory (MRAM) devices. One crucial issue for MRAM
technologies is to better understand and minimize the role played by structural
inhomogeneities that induce a distribution of magnetic properties and
stochastic behaviour. In this talk, we will present our recent results of magnetic
domain wall dynamics obtained in Ta-CoFeB-MgO nanodevices with
perpendicular magnetic anisotropy (PMA) and discuss the critical problems to be
addressed for its implementation into a memory device. By using He+ ion
irradiation to softly engineer interface intermixing, we will show that both the
creep and the flow regime can be strongly affected by disorder. We will also
demonstrate that Dzyaloshinskii-Moriya Interaction (DMI) can be induced by the
presence of such interface disorder. Finally, we will focus on the strong influence
of edge damages induced by the patterning process on DW dynamics.

Download lecture poster