Jaromír Hubálek, Ph.D.

Research Group Leader

Contact

Email:
Phone: +420 54114 9255, +420 54114 6195
Research group: Smart Nanodevices - Jaromír Hubálek
Workplace:

2019

2018

2017

2016

2015

2014

2013

2012

2011

2010

2009

  • Nano-Electro-Bio-Tools for Biochemical and Molecularly-Biological Studies of Eukaryotic Cells (NanoBioTECell) (GAP102/11/1068), Czech Science Foundation - Standard Grants, 2011 - 2015
  • Study of contribution of different DNA-damaging mechanisms to toxicity of cytostatics to human chemosensitive and chemoresistant neuroblastomas (GAP301/10/0356), Czech Science Foundation - Standard Grants, 2010 - 2014
  • International Cooperation in the Field of Nanotechnologies with In Vivo Imaging Techniques (CZ.1.07/2.3.00/20.0148), MEYS - OP Education for Competiteveness, 2012 - 2014
  • Support of the development of high-quality teams in R&D in the field of material science (CZ.1.07/2.3.00/20.0029), MEYS - OP Education for Competiteveness, 2011 - 2014
  • Partner Network for Bionanotechnological and Metallomic Research (CZ.1.07/2.4.00/31.0023), MEYS - OP Education for Competiteveness, 2012 - 2014
  • Processing and properties of ferroics and multiferroics (LD11035), MEYS - COST CZ, 2011 - 2013
  • New design and exploiting nanobiosensors and nanosensors to target medicine (KAN208130801), Academy of Sciences of the Czech Republic - Nanotechnologies for Society, 2008 - 2012

Study of electrical properties of very thin dielectric stacks grown by Atomic Layer Deposition (ALD) method

Very thin dielectric layers have been used in microelectronics for many years. Recently, it has encountered material limits where the tunneling of electrons in the gates of MOS transistors has begun to exceed an acceptable limit. From a nanotechnology point of view, we talk about 2D nanomaterials. The quality of dielectrics is assessed not only by min. thickness, breakthrough voltage and large dielectric constants, but also by the size of leakage currents. These streams can be the result of a number of phenomena such as direct and Fowler-Nordheim tunneling, Frenkel-Pool current and Schottky emission, or another yet not described phenomenon. The ALD method allows conformational growth of materials thinner than 1 nm. The combination of different materials to stacks allows to reach good dielectric constants while retaining high breakthrough voltage and low leakage currents. The work should focus on the study of the influence of the production process and the forming of stacks while examining the phenomena that cause leakages.

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Study of fluorescence impact on conductance in semiconducting nanostructures

The electron interaction of nanostructures with the environment is known and is described by several phenomena. An important phenomenon is the significant effect of nanostructure properties, where the density of energy is quantised. Photon excitation is also possible in case of semiconductors due to internal photoelectric effect. The effect of both phenomena can be observed on the change of the electrical conductivity of the material. When the nanostructure is covered with fluorescent material, both interactions occur unless the excitation occurs in the UV band. Fluorescence shifts the spectrum of excitation to the visible band, with changes in electron levels, which in turn directly affects the interaction with the nanomaterial on which the fluorescent material is bonded. The work will focus on the study of these interactions, their modelling and the practical measurement of the influence on the conductivity supplemented by testing in sensor applications.

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Study of electrical and sensing properties of semiconducting nanowires

Nanowires are a 1D structure where a quantum phenomenon is applied across the structure, which can significantly affect electrical properties compared to macrostructures. Interaction of nanowire with the environment, whether with gas molecules or bounded particles, affects electron density from surface to bulk. Temperature dependence of conductivity due to thermal excitation and eventual emissions may also differ greatly from assumptions. Experimental study of semiconducting materials such as some oxides or metal nitrides will need to be compared with available models and draw conclusions about the phenomena that play a role in electrical behaviour of nanowires.

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Method of perspiration rate measurement based on MEMS technology

The sweat perspiration rate is based on the measurement of the evaporation by differential measurement of humidity and temperature. This measurement is conditioned by sufficient distance between the measured points. In the case of a wearable device, its size must be very small, which significantly limits this condition. The research will focus on finding conditions, dependencies and shape of a MEMS-based measurement system to assure that the accuracy of the assay is as accurate as possible. The study of vapor-fluid systems and their modelling should result in the realization of the MEMS device.

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