Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations

JOURNAL OF APPLIED PHYSICS

Rieutord, F; Mazen, F; Reboh, S; Penot, JD; Bilteanu, L; Crocombette, JP; Vales, V; Holy, V; Capello, L, 2013: Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations. JOURNAL OF APPLIED PHYSICS 113(15), doi: 10.1063/1.4800538