Low pressure chemical vapor deposition - amorphous Si (growth of oxides / oxinitrides) (LPCVD-polySi)


Guarantor: Filip Münz, Ph.D.
Instrument status: Operational Operational, 9.2.2018 16:45
Equipment placement: CEITEC Nano - C1.34
Research group: CF: CEITEC Nano

Detailed description:

This position within the LPCVD system is dedicated to growth of amorphous silicon on Si wafers, using silane (SiH4) as a precursor in LPCVD process.