Low pressure chemical vapor deposition - amorphous Si (growth of oxides / oxinitrides) (LPCVD-polySi)
CONTACT US
Guarantor:
Radim Hrdý, Ph.D.
Instrument status:
Operational, 3.10.2025 08:00
Equipment placement:
CEITEC Nano - C1.34
Research group:
CF: CEITEC Nano
Description:
This position within the LPCVD system is dedicated to growth of amorphous silicon on Si wafers, using silane (SiH4) as a precursor in LPCVD process.