Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis

PHYSICAL REVIEW B

Richard, MI; Malachias, A; Rouviere, JL; Yoon, TS; Holmstrom, E; Xie, YH; Favre-Nicolin, V; Holy, V; Nordlund, K; Renaud, G; Metzger, TH, 2011: Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis. PHYSICAL REVIEW B 84(7), doi: 10.1103/PhysRevB.84.075314