Scanning electron microscope (SEM) MIRA3 XMU (MIRA3_XMU)
Scanning electron microscope (SEM) MIRA3 XMU
• Scanning electron microscope (SEM) is used to study the morphology and topography of conductive and non-conductive materials in high resolution (micro to nano-scale).
• Observation of surface samples with high depth of focus using multiple detection system (SE, BSE, STEM) including elemental analysis using energy dispersive spectrometer (EDS).
Acessory: Sputtering and Carbon Thread Coater Leica EM ACE600 for coating non-conductive material with a thin layer (thickness in nanometers) of conductive material.
• carbon coating and high vacuum sputtering of metals (gold, platinum, titanium, gold/palladium)
• integrated measurement of coating thickness based on the QCM crystal with an accuracy of 0.1 nm
• plasma cleaning of the sample and the interior part of equipment
• Observation both the surface and internal structure of micro and nano-objects (phase interface such as matrix-filler/reinforcement, particle distribution, aggregates and defects, fracture surfaces, porous 3D materials, units of supramolecular structure and so on)
• evaluation of the shape and dimensions (length, diameter, volume, roughness) of powders, tubes, short fibers
• fast and highly accurate chemical microanalysis and elemental mapping of a sample surface
• qualitative elemental analysis including determination of the distribution of each element
• quantitative analysis of the individual elements in a sample
• The structural analysis of polymeric materials, biopolymers and composites, biomaterials, ceramics, bones, teeth, substrates for tissue engineering, etc.
• High Brightness Schottky Emitter
SE, BSE, In-beam SE, In-Beam BSE
• High-vacuum (≤9x10-3Pa) or low-vacuum mode (7-500 Pa)
• Magnification 25 to 1 000 000x
• Acceleration voltage 200 V to 30 kV
• X-Y-Z 130×130×100mm
• Maximum specimen height: 106 mm