Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100 (DRIE)

Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100
CONTACT US

Guarantor: Marek Eliáš, Ph.D.
Technology / Methodology: Etching & Deposition
Instrument status: Operational Operational, 24.7.2020 11:27
Equipment placement: CEITEC Nano - C1.34
Research group: CF: CEITEC Nano


Detailed description:

Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios . It was developed for microelectromecha­nical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon via´s (TSV)´s in advanced 3D wafer level packaging technology .
There are two main technologies for high-rate DRIE: cryogenic and Bosch, although the Bosch process is the only recognised production technique. Both Bosch and cryo processes can fabricate 90° (truly vertical) walls, but often the walls are slightly tapered, e.g. 88° („reentrant“) or 92° („retrograde“).
Another mechanism is sidewall passivation: SiOxFy functional groups (which originate from sulphur hexafluoride and oxygen etch gases) condense on the sidewalls, and protect them from lateral etching. As a combination of these processes deep vertical structures can be made.


Publications:

  • Gablech, I.; Klempa, J.; Pekárek, J.; Vyroubal, P.; Hrabina, J.; Holá, M.; Kunz, J.; Brodský, J.; Neužil, P., 2020: Simple and Efficient AlN-Based Piezoelectric Energy Harvesters. MICROMACHINES 11(2), p. 143-1 - 143-10, doi: 10.3390/mi11020143
    (DRIE, KAUFMAN, RIE-CHLORINE, WIRE-BONDER, DIENER, DWL, SUSS-MA8, SUSS-RCD8)
  • Brodský, J., 2019: Characterization of graphene elecrical properties on MEMS structures. BACHELOR´S THESIS , p. 1 - 50
    (MPS150, WITEC-RAMAN, EVAPORATOR, DRIE, PECVD, DWL, SUSS-MA8, RIE-FLUORINE, RIE-CHLORINE, DIENER, SCIA)
  • Fecko, P., 2019: Gecko mimicking surfaces. MASTER´S THESIS , p. 1 - 52
    (SUSS-RCD8, SUSS-MA8, DWL, DRIE, LYRA, ALD, RIE-FLUORINE, ICON-SPM)
  • Prasek, J; Houska, D; Hrdy, R; Hubalek, J; Schmid, U, 2019: Optimization of Cryogenic Deep Reactive Ion Etching Process for On-Chip Energy Storage. 2019 42ND INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY (ISSE)
    (DRIE, ICON-SPM)
  • Gablech, I; Somer, J; Fohlerova, Z; Svatos, V; Pekarek, J; Kurdik, S; Feng, JG; Fecko, P; Podesva, P; Hubalek, J; Neuzil, P, 2018: Fabrication of buried microfluidic channels with observation windows using femtosecond laser photoablation and parylene-C coating. MICROFLUIDICS AND NANOFLUIDICS 22(9), doi: 10.1007/s10404-018-2125-6
    (DRIE, DWL, SUSS-MA8)