Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

ADVANCED FUNCTIONAL MATERIALS

Xiao, N; Villena, MA; Yuan, B; Chen, SC; Wang, BR; Elias, M; Shi, YY; Hui, F; Jing, X; Scheuermann, A; Tang, KC; McIntyre, PC; Lanza, M, 2017: Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching. ADVANCED FUNCTIONAL MATERIALS 27(33), doi: 10.1002/adfm.201700384

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