RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80 (RIE-FLUORINE)

RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80
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Guarantor: Marek Eliáš, Ph.D.
Technology / Methodology: Etching & Deposition
Instrument status: Operational Operational, 3.8.2023 13:21
Equipment placement: CEITEC Nano - C1.34
Research group: CF: CEITEC Nano


Description:

Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.
A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few millitorrs and a few hundred millitorrs by adjusting gas flow rates and/or adjusting an exhaust orifice.


Publications:

  • ZANGANA, S.; LEDNICKÝ, T.; BONYÁR, A., 2023: Three Generations of Surface Nanocomposites Based on Hexagonally Ordered Gold Nanoparticle Layers and Their Application for Surface-Enhanced Raman Spectroscopy. CHEMOSENSORS 11(4), p. 1 - 14, doi: 10.3390/chemosensors11040235; FULL TEXT
    (VERIOS, HELIOS, RIE-FLUORINE, DIENER)
  • Kunc, J.; Morzhuk, B.; Shestopalov, M.; Fridrišek, T.; Dědič, V., 2023: Spectral current density and responsivity scaling for Fourier transform photocurrent spectroscopy. REVIEW OF SCIENTIFIC INSTRUMENTS 94(5), doi: 10.1063/5.0139027; FULL TEXT
    (RAITH, MIRA-EBL, EVAPORATOR, RIE-FLUORINE)
  • KNAUER, S.; DAVÍDKOVÁ, K.; SCHMOLL, D.; SERHA, R.; VORONOV, A.; WANG, Q.; VERBA, R.; DOBROVOLSKIY, O.; LINDNER, M.; REIMANN, T.; DUBS, C.; URBÁNEK, M.; CHUMAK, A., 2023: Propagating spin-wave spectroscopy in a liquid-phase epitaxial nanometer-thick YIG film at millikelvin temperatures. JOURNAL OF APPLIED PHYSICS 133(14), p. 1 - 8, doi: 10.1063/5.0137437; FULL TEXT
    (RAITH, RIE-FLUORINE, SCIA, BRILLOUIN, EVAPORATOR, VNA-MPI)
  • BRODSKÝ, J.; GABLECH, I.; MIGLIACCIO, L.; HAVLÍČEK, M.; DONAHUE, M.; GLOWACKI, E., 2023: Downsizing the Channel Length of Vertical Organic Electrochemical Transistors. ACS APPL MATER INTER 15(22), p. 27002 - 8, doi: 10.1021/acsami.3c02049; FULL TEXT
    (SUSS-MA8, EVAPORATOR, SCIA, PARYLENE, RIE-FLUORINE, MIRA-EBL, DEKTAK, ICON-SPM)
  • Sharifahmadian, O.; Pakseresht, A.; Mirzaei, S.; Eliáš, M.; Galusek, D., 2023: Mechanically robust hydrophobic fluorine-doped diamond-like carbon film on glass substrate. DIAMOND AND RELATED MATERIALS 138, doi: 10.1016/j.diamond.2023.110252; FULL TEXT
    (KRATOS-XPS, VERIOS, SEE-SYSTEM, NANOINDENTER, RIE-FLUORINE)

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