RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80 (RIE-FLUORINE)

RIE by F Chemistry and PECVD of hard C-based films Oxford Instruments Plasma Technology PlasmaPro 80
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Guarantor: Marek Eliáš, Ph.D.
Technology / Methodology: Etching & Deposition
Instrument status: Some Issues Some Issues, 27.7.2026 10:30, The pressure gauge has an offset zero, and the pressure during the process must be adjusted using the angle.
Equipment placement: CEITEC Nano - C1.34
Research group: CF: CEITEC Nano


Description:

Reactive-ion etching (RIE) is a microfabrication etching technology. RIE is a type of dry etching that differs from wet etching in several respects. RIE uses chemically reactive plasma to remove deposited material from wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.
A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber with a wafer platter at the bottom of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range of a few millitorrs to a few hundred millitorrs by adjusting gas flow rates and/or an exhaust orifice.


Publications:

  • Singh, A.; Němec, H.; Kunc, J.; Kužel, P., 2025: . JOURNAL OF PHYSICS D: APPLIED PHYSICS 58(4), doi: 10.1088/1361-6463/ad8e71; FULL TEXT
    (RAITH, MIRA-EBL, RIE-FLUORINE)
  • Děcký, M., 2025: . MASTER'S THESIS , p. 1 - 63; FULL TEXT
    (MIRA-EBL, SUSS-MA8, DEKTAK, NANOCALC, MAGNETRON, RIE-FLUORINE, EVAPORATOR, WIRE-BONDER, MPS150, LYRA, LASER-DICER)
  • Liu, X.; Brodský, J.; Vírostko, J.; Jarušek, J.; Migliaccio, L.; Zítka, O.; Gablech, I.; Neužil, P., 2025: . SCIENTIFIC REPORTS 15(1), doi: 10.1038/s41598-025-24442-5; FULL TEXT
    (DRIE, SUSS-MA8, RIE-FLUORINE)
  • TAKHSHA, M.; SINGH, V.; LEDIEU, J.; FABBRICI, S.; CASOLI, F.; MEZZADRI, F.; HORKÝ, M.; FOURNEE, V.; UHLÍŘ, V.; ALBERTINI, F., 2025: Magnetic Manipulation of Spatially Confined Multiferroic Heuslers by Martensitic Microstructure Engineering. SMALL STRUCTURES 6(11), p. 1 - 12, doi: 10.1002/sstr.202500284; FULL TEXT
    (VERIOS, VERSALAB, SUSS-MA8, RIE-FLUORINE, KERR-MICROSCOPE)
  • SUPALOVÁ, L.; BARTOŠÍK, M.; ŠVARC, V.; MACH, J.; PIASTEK, J.; ŠPAČEK, O.; KONEČNÝ, M.; ŠIKOLA, T., 2025: High-Temperature Ultrasensitive FET-Based CVD Graphene Hall Probes. ACS APPLIED ELECTRONIC MATERIALS 7(13), p. 5889 - 5897, doi: 10.1021/acsaelm.5c00351; FULL TEXT
    (DWL, SUSS-MA8, EVAPORATOR, MIRA-EBL, RIE-FLUORINE, WIRE-BONDER, WITEC-RAMAN, LYRA)

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