UHV Preparation and Analytical System - Custom Deposition Chamber SPECS (UHV-DEPOSITION)

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Guarantor: Josef Polčák, Ph.D.
Instrument status: Operational Operational, 9.3.2026 09:09
Equipment placement: CEITEC Nano - C1.38
Research group: CF: CEITEC Nano


Description:

The UHV-DEPOSITION - a multi-purpose chamber for the preparation of surfaces and thin layers (UHV-Deposition) is one of the instruments of the UHV-Cluster, which combines preparation and in-situ analysis by several complementary methods for the characterization of surfaces and thin films. It provides:
- the possibility of preparation of samples and of deposition of materials by thermal evaporation (e.g. metals, organics).
- calibration of deposition rates by a quartz microbalance.
- the possibility to mount custom components like effusion cells.
The chamber is equipped with an RF plasma source for atomic nitrogen and oxygen.
Equipment: sample heating by electron beam heater up to 1400 °C, sample cooling by L-N2, pyrometer for temperature measurement.


Publications:

  • Mirdamadi, H.; Wang, R.; David, J.; Jiang, T.; Wang, Y.; Vařeka, K.; Dymáček, M.; Bábor, P.; Šikola, T.; Kolíbal, M., 2026: . ACS NANO 20(10), p. 8255 - 8265, doi: 10.1021/acsnano.5c12130; FULL TEXT
    (UHV-DEPOSITION, UHV-LEEM, UHV-XPS, SIMS)
  • JAKUB, Z.; PLANER, J.; HRŮZA, D.; ENDSTRASSER, Z.; PROCHÁZKA, P.; ČECHAL, J., 2025: Atomically-defined on-surface synthesis of multilayer metal-organic frameworks. COMMUNICATIONS CHEMISTRY 8(1), doi: 10.1038/s42004-025-01742-5; FULL TEXT
    (UHV-DEPOSITION, UHV-XPS, UHV-SPM, UHV-PREPARATION)
  • Prochazka, P.; Frezza, F.; Sánchez-Grande, A.; Carrera, M.; Chen, QF.; Stará, V.; Kurowská, A.; Curiel, D.; Jelínek, P.; Cechal, J., 2025: Monitoring On-Surface Chemical Reactions by Low-Energy Electron Microscopy: from Conformation Change to Ring Closure in 2D Molecular Gas. CHEMISTRY 31(20), p. e20250056 - 6, doi: 10.1002/chem.202500561; FULL TEXT
    (UHV-LEEM, UHV-SPM, UHV-DEPOSITION, UHV-PREPARATION)
  • JAKUB, Z.; PLANER, J.; HRŮZA, D.; TRLLOVÁ SHAHSAVAR, A.; PAVELEC, J.; ČECHAL, J., 2025: Identical Fe-N4 Sites with Different Reactivity: Elucidating the Effect of Support Curvature. ACS APPLIED MATERIALS & INTERFACES 17(6), p. 10136 - 10144, doi: 10.1021/acsami.4c19913; FULL TEXT
    (UHV-CLUSTER, UHV-DEPOSITION, UHV-PREPARATION, UHV-SPM, UHV-XPS)
  • KRAJŇÁK, T.; STARÁ, V.; PROCHÁZKA, P.; PLANER, J.; SKÁLA, T.; BLATNIK, M.; ČECHAL, J., 2024: . ACS APPLIED MATERIALS & INTERFACES 16(14), p. 18099 - 13, doi: 10.1021/acsami.3c18697; FULL TEXT
    (UHV-LEEM, UHV-XPS, UHV-PREPARATION, UHV-SPM, UHV-DEPOSITION)

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