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Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions
NANOSCALE ADVANCES
MANIŠ, J.; MACH, J.; BARTOŠÍK, M.; ŠAMOŘIL, T.; HORÁK, M.; ČALKOVSKÝ, V.; NEZVAL, D.; KACHTÍK, L.; KONEČNÝ, M.; ŠIKOLA, T., 2022: Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions. NANOSCALE ADVANCES 4(17), p. 1 - 8, doi: 10.1039/d2na00175f; FULL TEXT
(VERIOS, NANOSAM, TITAN, LYRA, ICON-SPM)
Equipment:
- High resolution Scanning Electron Microscope FEI Verios 460L
- nanoScanning Auger Microscopy/ Scanning electron microscopy with polarization analysis Scienta Omicron nanoSAM Lab
- High-resolution (scanning) Transmission Electron Microscope FEI Titan Themis 60-300 cubed
- Focused Ion Beam/Scanning Electron Microscope TESCAN LYRA3
- Scanning Probe Microscope Bruker Dimension Icon
Research Groups:
CEITEC authors: